STGAP2S datasheet(6/23 Pages) STMICROELECTRONICS

6 / 23 page

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

RGON

Source RDS_ON

IGON =100 mA

1.125

1.5

Ω

IGOFF

Sink short-circuit current

TJ =25 °C

TJ =-40 ÷ +125 °C(1)

VGOFFL

Sink output low level voltage

IGOFF =100 mA

120

RGOFF

Sink RDS_ON

IGOFF =100 mA

0.96

1.2

Ω

Miller Clampfunction (STGAP2SC only)

VCLAMPth

CLAMP voltage threshold

VCLAMP vs. GNDISO

1.3

2.6

ICLAMP

CLAMP short-circuit current

VCLAMP =15 V

TJ =25 °C

TJ =-40 ÷ +125 °C(1)

VCLAMP_L

CLAMP low level output

voltage

ICLAMP =100 mA

115

RCLAMP

CLAMP RDS_ON

ICLAMP =100 mA

0.96

1.15

Ω

Overtemperature protection

TSD

Shutdown temperature

170

°C

Thys

Temperature hysteresis

°C

Standby

tSTBY

Standby time

See Section 5.3

200

280

500

µs

tWUP

Wake-up time

See Section 5.3

µs

tawake

Wake-up delay

See Section 5.3

140

200

µs

tstbyfilt

Standby filter

See Section 5.3

200

280

800

1. Characterization data, not tested in production.

Table 6. Isolation related package specifications

Parameter

Symbol

Value

Unit

Conditions

Clearance

(Minimum External Air Gap )

CLR

Measured from input terminals to output terminals,

shortest distance through air

Creepage (*)

(Minimum External Tracking)

CPG

Measured from input terminals to output terminals,

shortest distance path along body

Comparative Tracking Index

(Tracking Resistance)

CTI

≥ 400

DIN IEC 112/VDE 0303 Part 1

Isolation Group

Material Group (DIN VDE 0110, 1/89, Table 1)

STGAP2S

Electrical characteristics

DS12541 - Rev 3

page 6/23

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