AF60N03

N-Channel Enhancement Mode Power MOSFET

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Sep 8, 2005

2/5

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

45

32

A

120

A

Total Power Dissipation

44

W

Linear Derating Factor

0.352

W/ºC

Storage Temperature Range

-55 to 175

ºC

Operating Junction Temperature Range

-55 to 175

ºC

Thermal Data

Symbol

Parameter

Maximum

Units

Thermal Resistance Junction-Case

Max.

3.4

ºC/W

Thermal Resistance Junction- Ambient

Max.

110

ºC/W

Limits

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

30

-

-

V

Breakdown Voltage Temperature

Coefficient

Reference to 25ºC,

-

0.026

-

V/ºC

-

-

12

Static Drain-Source

-

-

25

mΩ

Gate Threshold Voltage

1

-

3

V

-

25

-

S

Drain-Source Leakage Current

-

-

1

Drain-Source Leakage Current

-

-

250

uA

Gate Source Leakage

-

-

±100

nA

-

11.6

-

Gate-Source Charge

-

3.9

-

Gate-Drain (“Miller”) Charge

-

7

-

nC

-

8.8

-

Rise Time

-

57.5

-

Turn-Off Delay Time

-

18.5

-

Fall-Time

-

6.4

-

nS

Input Capacitance

-

1135

-

Output Capacitance

-

200

-

Reverse Transfer Capacitance

f=1.0MHz

-

135

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

-

-

1.3

V

Reverse Recovery Time

-

23.3

-

ns

Reverse Recovery Charge

dl/dt=100A/µs

-

16

-

nC

Note 1: Pulse width limited by safe operating area.

Note 2: Pulse width < 300us, duty cycle < 2%.