4

Fujitsu Compound Semiconductor Products contain gallium arsenide

(GaAs) which can be hazardous to the human body and the environment.

For safety, observe the following procedures:

CAUTION

• Do not put these products into the mouth.

• Do not alter the form of this product into a gas, powder, or liquid

through burning, crushing, or chemical processing as these by-products

are dangerous to the human body if inhaled, ingested, or swallowed.

• Observe government laws and company regulations when discarding this

product. This product must be discarded in accordance with methods

specified by applicable hazardous waste procedures.

For further information please contact:

FUJITSU COMPOUND SEMICONDUCTOR, INC.

2355 Zanker Rd.

San Jose, CA 95131-1138, U.S.A.

Phone: (408) 232-9500

FAX: (408) 428-9111

www.fcsi.fujitsu.com

FUJITSU MICROELECTRONICS EUROPE, GmbH

Quantum Devices Division

Network House

Norreys Drive

Maidenhead, Berkshire SL6 4FJ

Phone:+44 (0)1628 504800

FAX:+44 (0)1628 504888

Fujitsu Limited reserves the right to change products and specifications without notice.

The information does not convey any license under rights of Fujitsu Limited or others.

© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.

Printed in U.S.A. FCSI0799M200

FLL400IP-2

L-Band Medium & High Power GaAs FET

Case Style "IP"

Metal-Ceramic Hermetic Package

18.6

±0.2

(0.732)

45

°

2

3

4

5

6

1

22

±0.2

(0.866)

2.4

(0.094)

(0.039)

13.8

±0.2

(0.543)

13.3

(0.523)

2-R1.3

±0.2

(0.051)

5

(0.197)

0.1

+0.05

-0.01

2-1.4

(0.055)

2-1

(0.039)

Unit: mm (inches)

1, 2: Gate

3, 6: Source

4, 5: Drain