2SC2235 datasheet(1/3 Pages) ISC

номер детали	2SC2235

подробное описание детали	isc Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

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isc Silicon NPN Power Transistor

2SC2235

DESCRIPTION

·

Collector-Emitter Breakdown Voltage

:VCEO= 120V(Min)

·

DC Current Gain

: hFE= 80-240@ (VCE= 5V, IC= 0.1A)

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

TV Horizontal Deflection Output Application

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

120

V

VCEO

Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

0.8

A

PC

Collector Power Dissipation

@ TC=25℃

900

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

Аналогичный номер детали - 2SC2235

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SC2235	151Kb / 2P	TRANSISTOR (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
Unisonic Technologies	2SC2235	115Kb / 4P	AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS
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Аналогичный номер детали - 2SC2235

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