 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
2SAR583D3 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SAR583D3 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
|
1 / 2 page  isc website： www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SAR583D3 DESCRIPTION · Collector-emitter breakdown voltage : BVCEO= -50V(Min) · High DC Current Gain : hFE= 180-450@ (VCE= -3V, IC= -1A) · Low Saturation Voltage : VCE(sat)= -0.35V(Max)@ (IC= -3A, IB= -0.15A) · Complement to Type 2SCR583D3 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector Current-Pulse -14 A PT Total Power Dissipation @TC=25℃ 10 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Аналогичный номер детали - 2SAR583D3 |
|
Аналогичное описание - 2SAR583D3 |
|
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
