TF3403 datasheet(2/5 Pages) TUOFENG

номер детали	TF3403

подробное описание детали	SOT-23 Plastic-Encapsulate MOSFETS

PDF	5 Pages

Scroll/Zoom	100%

производитель	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

домашняя страница	http://www.sztuofeng.com/?lang=en

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2 / 5 page

Symbol

Min

Typ

Max

Units

BVDSS

-30

-1

IGSS

±100

VGS(th)

0.8

-1.4

-2.0

ID(ON)

-5

130

166

200

Ω

gFS

3.8

VSD

-0.82

-1

-2

Ciss

302

370

Coss

50.3

Crss

37.8

612

Ω

Qg(10)

6.8

Qg(4.5)

2.4

3.1

Qgs

1.6

Qgd

0.95

tD(on)

7.5

3.2

tD(off)

6.8

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

VGS=-10V, VDS=-15V, ID=-2.6A

VGS=0V, VDS=-15V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge(4.5V)

Gate Source Charge

Gate Drain Charge

Turn-On Rise Time

Turn-Off DelayTime

VGS=-10V, VDS=-15V, RL=5.8Ω,

RGEN=3Ω

Gate resistance

Ω

VGS=-4.5V, ID=-2A

IS=-1A,VGS=0V

VDS=-5V, ID=-2.5A

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

µA

Gate Threshold Voltage

VDS=VGS ID=-250µA

VDS=-24V, VGS=0V

VDS=0V, VGS=±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Drain-Source Breakdown Voltage

On state drain current

ID=-250µA, VGS=0V

VGS=-4.5V, VDS=-5V

VGS=-10V, ID=-2.6A

Reverse Transfer Capacitance

Total Gate Charge(10V)

TF3403

www.sztuofeng.com

,2018 V1.0

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate MOSFETS

Mar

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