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TF3402 датащи(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

номер детали TF3402
подробное описание детали  SOT-23 Plastic-Encapsulate MOSFETS
PDF  5 Pages
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производитель  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
домашняя страница  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

TF3402 датащи(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  TF3402 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co TF3402 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co TF3402 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co TF3402 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co TF3402 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co  
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background image
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
IGSS
100
nA
VGS(th)
0.6
0.8
1.2
V
ID(ON)
10
A
55
m
Ω
m
Ω
1
00
gFS
8S
VSD
0.8
1
.2
V
IS
2.5
A
Ciss
390
pF
Coss
54.5
pF
Crss
41
pF
Rg
3
Ω
Qg
4.34
nC
Qgs
0.6
nC
Qgd
1.38
nC
tD(on)
3.3
ns
tr
1ns
tD(off)
21.7
ns
tf
2.1
ns
trr
12
ns
Qrr
6.3
nC
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=2.5V, ID=1.5A
VGS=4.5V, VDS=5V
VGS=10V, ID=4A
Reverse Transfer Capacitance
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
µA
Gate Threshold Voltage
VDS=VGS ID=250µA
VDS=24V, VGS=0V
VDS=0V, VGS=±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
Ω
VGS=4.5V, ID=2.3A
IS=1A,VGS=0V
VDS=5V, ID=4A
IF=4A, dI/dt=100A/µs
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=15V, ID=4A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=3.75Ω,
RGEN=6Ω
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
50
70
65
90
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
www.sztuofeng.com
Feb,2018 V1.0
2
TF3402



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