D882 datasheet(1/2 Pages) TUOFENG

номер детали	D882

подробное описание детали	SOT-89 Plastic-Encapsulate Transistors

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производитель	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTD

SOT-89 Plastic-Encapsulate Transistors

D882

D882 SOT-89

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

3

A

PC

Collector Power Dissipation

0.5

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS(Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC = 100μA, IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC = 10mA, IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100μA, IC=0

6

V

Collector cut-off current

ICBO

VCB= 40V, IE=0

1

µA

Collector cut-off current

ICEO

VCE= 30V, IB=0

10

µA

Emitter cut-off current

IEBO

VEB= 6V, IC=0

1

µA

hFE(1)

VCE=2V, IC= 1A

60

400

DC current gain

hFE(2)

VCE=2V, IC= 100mA

32

Collector-emitter saturation voltage

VCE(sat)

IC= 2A, IB= 0.2 A

0.5

V

Base-emitter saturation voltage

VBE(sat)

IC= 2A, IB= 0.2 A

1.5

V

Transition frequency

fT

VCE= 5V , Ic=0.1A

f =10MHz

50

MHz

CLASSIFICATION OF hFE(1)

Rank

R

O

Y

GR

Range

60-120

100-200

160-320

200-400

SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

Аналогичный номер детали - D882

производитель	номер детали	датащи	подробное описание детали
List of Unclassifed Man...	D882	1Mb / 1P	TO-126 Plastic-Encapsulate Transistors
Jiangsu Changjiang Elec...	D882	131Kb / 2P	TRANSISTOR竊?NPN 竊
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