Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Off Characteristic

Drain-Source Breakdown Voltage

650

-

-

V

Breakdown Voltage Temperature

Coefficient

Reference to 25℃,

250μA

-

0.5

-

V/℃

Zero Gate Voltage Drain Current

-

-

1

μA

-

-

50

μA

Gate to Body Leakage Current

-

-

±10

nA

On Characteristics

μA

2

-

4

V

Static Drain-Source On-Resistance

-

1.0

1.27

Ω

Forward Transconductance

-

6

-

S

Dynamic Characteristics

Input Capacitance

f = 1.0MHz

-

1145

-

pF

Output Capacitance

-

130

-

pF

Reverse Transfer Capacitance

-

28

-

pF

Total Gate Charge

-

41

-

nC

Gate-Source Charge

-

7.5

-

nC

Gate-

Drain(“Miller”) Charge

-

22

-

nC

Switching Characteristics

Turn-On Delay Time

-

20

-

ns

Turn-On Rise Time

-

12

-

ns

Turn-Off Delay Time

-

45

-

ns

Turn-Off Fall Time

-

15

-

ns

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain to Source Diode Forward Current

-

-

7

A

Maximum Pulsed Drain to Source Diode Forward Current

-

-

28

A

Drain to Source Diode Forward Voltage

-

-

1.6

V

Reverse Recovery Time

di/dt

=100A/μs

-

400

-

ns

Reverse Recovery Charge

-

2.6

-

uC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

4. Pulse width

≤ 300μs; duty cycle ≤ 2%.

7N65

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

- 2 -

www.sztuofeng.com

,2018 V1.0

Mar