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4884 датащи(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

номер детали 4884
подробное описание детали  SOP-8 Plastic-Encapsulate MOSFETS
PDF  5 Pages
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производитель  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
домашняя страница  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

4884 датащи(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  4884 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co 4884 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co 4884 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co 4884 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co 4884 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co  
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background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
---
---
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=
9 A
---
18
21
m
Ω
VGS=4.5V , ID= A
---
22
2
5
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.
1
1.
6
2.1
V
IDSS
Drain-Source Leakage Current
VDS=24V , VGS=0V , TJ=25℃
---
---
1
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=
9A
---
30
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
3.6
Ω
Qg
Total Gate Charge (4.5V)
VDS=15V , VGS=4.5V , ID=
9 A
---
8.9
nC
Qgs
Gate-Source Charge
---
1.5
---
Qgd
Gate-Drain Charge
---
2.8
---
Td(on)
Turn-On Delay Time
VDD=15V , VGEN=10V , RG=6Ω
ID=
1A,RL=15Ω
---
6
8.8
ns
Tr
Rise Time
---
8.2
14
Td(off)
Turn-Off Delay Time
---
16
24
Tf
Fall Time
---
4
8
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
650
pF
Coss
Output Capacitance
---
65
Crss
Reverse Transfer Capacitance
---
57
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.
5mH , IAS=9A
18
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
2
A
ISM
Pulsed Source Current
2,6
---
---
50
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=2.3A , TJ=25℃
---
---
1.
1
V
trr
Reverse Recovery Time
IF=
9A , dI/dt=100A/µs , TJ=25℃
---
6
---
nS
Qrr
Reverse Recovery Charge
---
3.9
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.
5mH,IAS=9A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Diode Characteristics
Guaranteed Avalanche Characteristics
Electrical Characteristics (TJ=25 ℃
, unless otherwise noted)
Page 2
Dec.2017
7
BVDSS
---
---
---
---
---
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOP-8 Plastic-Encapsulate MOSFETS
4884
www.sztuofeng.com



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