2N2222AS-AB datasheet(2/5 Pages) FS

номер детали	2N2222AS-AB

подробное описание детали	General Purpose Transistors NPN Silicon

PDF	5 Pages

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производитель	FS [First Silicon Co., Ltd]

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2N2222AS-AB

5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)

OFF CHARACTERISTICS

ON CHARACTERISTICS (Note 2.)

SMALL–SIGNAL CHARACTERISTICS

DC Current Gain

(IC = 0.1 mA, VCE = 10 V)

(IC = 1.0 mA, VCE = 10 V)

(IC = 10 mA, VCE = 10 V)

HFE

(IC = 10 mA, VCE = 10 V,TA= –55°C)

(IC = 150 mA, VCE = 10 V)

100

300

(IC = 150 mA, VCE = 1.0 V)

(IC = 500 mA, VCE = 10 V)

Collector–Emitter Saturation Voltage

(IC = 150 mA, IB = 15 mA)

VCE(sat)

0.3

(IC = 500 mA, IB = 50 mA)

Base–Emitter Saturation Voltage

(IC = 150 mA, IB = 15 mA)

VBE(sat)

0.6

1.2

(IC = 500 mA, IB = 50 mA)

Current–Gain — Bandwidth Product

(IC = 20mA, VCE= 20V, f = 100MHz)

300

MHz

Output Capacitance

(VCB = 10.0V, IE = 0, f = 1.0 MHz)

Cobo

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Collector–Emitter Breakdown Voltage

(IC = 10 mA, IB = 0)

VBR(CEO)

Collector–Base Breakdown Voltage

(IC = 10 μA, IE = 0)

VBR(CBO)

Emitter–Base Breakdown Voltage

(IE = 10 μA, IC = 0)

VBR(EBO)

Collector Cutoff Current

(VCB = 60 V, IE = 0)

(VCB = 60 V, IE = 0, TA = 125°C)

ICBO

0.01

μA

Emitter Cutoff Current

(VEB = 3.0 V, IC = 0)

IEBO

100

Collector-Emitter cutoff Current

(VCE 40V,IB=0)

ICEO

μA

2022. 04.

Revision No : 0

2022. 04. 28

Revision No : 0

2/5

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