SSM6P35AFE datasheet(3/8 Pages) TOSHIBA

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SSM6P35AFE

6. Electrical Characteristics

6.1. Static Characteristics

(Unless otherwise specified, Ta = 25 �)(Q1, Q2 Common)

Characteristics

Gate leakage current

Drain cut-off current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source on-resistance

Forward transfer admittance

(Note 1)

(Note 2)

(Note 3)

Symbol

IGSS

IDSS

V(BR)DSS

V(BR)DSX

Vth

RDS(ON)

|Yfs|

Test Condition

VDS = 0 V, VGS = ±10 V

VDS = -20 V, VGS = 0 V

ID = -1 mA, VGS = 0 V

ID = -1 mA, VGS = 10 V

VDS = -10 V, ID = -100 µA

ID = -10 mA, VGS = -1.2 V

ID = -20 mA, VGS = -1.5 V

ID = -50 mA, VGS = -1.8 V

ID = -150 mA, VGS = -2.5 V

ID = -150 mA, VGS = -4.5 V

VDS = -10 V, ID = -100 mA

Min

�

-20

-10

-0.3

�

Typ.

�

3.2

2.3

2.0

1.5

1.1

430

Max

±1

-1

�

-1

4.0

2.9

2.1

1.4

�

Unit

µA

Ω

Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-

source breakdown voltage is lowered in this mode.

Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (-100 µA

for this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be

lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).

Take this into consideration when using the device.

Note 3: Pulse measurement.

6.2. Dynamic Characteristics

(Unless otherwise specified, Ta = 25 �)(Q1, Q2 Common)

Characteristics

Input capacitance

Reverse transfer capacitance

Output capacitance

Switching time (rise time)

Switching time (turn-on delay time)

Switching time (fall time)

Switching time (turn-off delay time)

Symbol

Ciss

Crss

Coss

td(on)

td(off)

Test Condition

VDS = -10 V, VGS = 0 V,

f = 1 MHz

VDD = -10 V, ID = -50 mA,

VGS = 0 to -4.5 V, RG = 10 Ω

Duty ≤ 1%, VIN: tr, tf < 5 ns,

Common source, See Chapter 6.3.

Min

�

Typ.

145

420

Max

�

Unit

6.3. Switching Time Test Circuit

Fig. 6.3.1

Switching Time Test Circuit

Fig. 6.3.2

Input Waveform/Output Waveform

2021-02-01

Rev.3.0

Toshiba Electronic Devices & Storage Corporation

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