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RA4M2 датащи(PDF) 37 Page - Renesas Technology Corp

номер детали RA4M2
подробное описание детали  Leading-performance 100 MHz Arm Cortex-M33 core, up to 512 KB code flash memory with background operation, 8 KB Data flash memory, and 128 KB SRAM with Parity/ECC.
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производитель  RENESAS [Renesas Technology Corp]
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2.3.4
Wakeup Timing
Table 2.20
Timing of recovery from low power modes
Parameter
Symbol
Min Typ
Max
Unit Test conditions
Recovery time from
Software Standby
mode*1
Crystal resonator
connected to main clock
oscillator
System clock source is
main clock oscillator*2
tSBYMC*13 —
2.1
2.4
ms
Figure 2.14
The division ratio of all
oscillators is 1.
System clock source is
PLL with main clock
oscillator*3
tSBYPC*13 —
2.2
2.6
ms
External clock input to
main clock oscillator
System clock source is
main clock oscillator*4
tSBYEX*13 —
45
125
μs
System clock source is
PLL with main clock
oscillator*5
tSBYPE*13 —
170
255
μs
System clock source is sub-clock oscillator*6 *11
tSBYSC*13 —
0.7
0.8
ms
System clock source is LOCO*7 *11
tSBYLO*13 —
0.7
0.9
ms
System clock source is HOCO clock oscillator*8
tSBYHO*13 —
55
130
µs
System clock source is PLL with HOCO*9
tSBYPH*13 —
175
265
µs
System clock source is MOCO clock oscillator*10
tSBYMO*13 —
35
65
µs
Recovery time from
Deep Software
Standby mode
DPSBYCR.DEEPCUT[1] = 0 and
DPSWCR.WTSTS[5:0] = 0x0E
tDSBY
0.38
0.54
ms
Figure 2.15
DPSBYCR.DEEPCUT[1] = 1 and
DPSWCR.WTSTS[5:0] = 0x19
tDSBY
0.55
0.73
ms
Wait time after cancellation of Deep Software Standby mode
tDSBYWT
56
57
tcyc
Recovery time from
Software Standby
mode to Snooze
mode
High-speed mode when system clock source is
HOCO (20 MHz)
tSNZ
35*12 70*12 μs
Figure 2.16
High-speed mode when system clock source is
MOCO (8 MHz)
tSNZ
11*12 14*12 μs
Note 1. The recovery time is determined by the system clock source. When multiple oscillators are active, the recovery time can be
determined with the following equation:
Total recovery time = recovery time for an oscillator as the system clock source + the longest tSBYOSCWT in the active oscillators -
tSBYOSCWT for the system clock + 2 LOCO cycles (when LOCO is operating) + Subosc is oscillating and MSTPC0 = 0 (CAC
module stop))
Note 2. When the frequency of the crystal is 24 MHz (Main Clock Oscillator Wait Control Register (MOSCWTCR) is set to 0x05) and the
greatest value of the internal clock division setting is 1.
Note 3. When the frequency of PLL is 200 MHz (Main Clock Oscillator Wait Control Register (MOSCWTCR) is set to 0x05) and the greatest
value of the internal clock division setting is 4.
Note 4. When the frequency of the external clock is 24 MHz (Main Clock Oscillator Wait Control Register (MOSCWTCR) is set to 0x00) and
the greatest value of the internal clock division setting is 1.
Note 5. When the frequency of PLL is 200 MHz (Main Clock Oscillator Wait Control Register (MOSCWTCR) is set to 0x00) and the greatest
value of the internal clock division setting is 4.
Note 6. The Sub-clock oscillator frequency is 32.768 KHz and the greatest value of the internal clock division setting is 1.
Note 7. The LOCO frequency is 32.768 KHz and the greatest value of the internal clock division setting is 1.
Note 8. The HOCO frequency is 20 MHz and the greatest value of the internal clock division setting is 1.
Note 9. The PLL frequency is 200 MHz and the greatest value of the internal clock division setting is 4.
Note 10. The MOCO frequency is 8 MHz and the greatest value of the internal clock division setting is 1.
Note 11. In Subosc-speed mode, the sub-clock oscillator or LOCO continues oscillating in Software Standby mode.
Note 12. When the SNZCR.RXDREQEN bit is set to 0, the following time is added as the power supply recovery time: 16 µs (typical), 48 µs
(maximum).
Note 13. The recovery time can be calcurated with the equation of tSBYOSCWT + tSBYSEQ. And they can be determined with the fol-lowing
value and equation. For n, the greatest value is selected from among the internal clock division settings.
Wakeup time TYP
MAX
Unit
tSBYOSCWT
tSBYSEQ
tSBYOSCWT
tSBYSEQ
tSBYMC
(MSTS[7:0]*32 + 3) /
0.262
35 + 18 / fICLK + 4n / fMAIN
(MSTS[7:0]*32 + 14 /
0.236
62 + 18 / fICLK + 4n / fMAIN
µs
RA4M2 Datasheet
2. Electrical Characteristics
R01DS0367EJ0110 Rev.1.10
Jan 27, 2021
Page 37 of 92



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