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14N65L-TQ2-R датащи(PDF) 8 Page - Unisonic Technologies

номер детали 14N65L-TQ2-R
подробное описание детали  14A, 650V N-CHANNEL POWER MOSFET
PDF  9 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

14N65L-TQ2-R датащи(HTML) 8 Page - Unisonic Technologies

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14N65-TC
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
8 of 9
www.unisonic.com.tw
QW-R205-452.C
TYPICAL CHARACTERISTICS (Cont.)
Gate Threshold Voltage vs.
Junction Temperature
Junction Temperature, TJ (°C)
Source Current vs. Source-Drain
Voltage
Source-Drain Voltage, VSD (V)
Drain Current vs. Gate-Source
Voltage
Gate-Source Voltage, VGS (V)
Drain Current, ID (A)
-50
0
50
150
100
25°C
TA=150°C
Drain-Source On-Resistance vs.
Drain Current
TA=25°C
VGS=10V
Pulsed
TA=25°C
Pulsed
Drain Current vs. Junction
Temperature
Junction Temperature, TJ (°C)
0
25
50
75
100
125
150
0
2
4
6
10
8
ID=0.25mA
Pulsed
0.8
1.6
0
-40°C
Power Dissipation vs. Junction
Temperature
Junction Temperature, TJ (°C)
0
25
50
75
100
125
150
1
1.4
1.2
0.8
0.6
0.4
100
1
10
0.2
0.4
0.6
0.8
1
1.2
1.4
15
25
20
10
5
0
0.4
1.2
30
60
0
50
10
20
40
15
5
10
0
TO-220F1
TO-220F1
0
4
8
12
20
16
0.1



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