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CMBD2004C датащи(PDF) 2 Page - Cystech Electonics Corp. |
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CMBD2004C датащи(HTML) 2 Page - Cystech Electonics Corp. |
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2 / 4 page ![]() CYStech Electronics Corp. Spec. No. : C335N3 Issued Date : 2003.05.30 Revised Date : Page No. : 2/4 CMBD2004/A/C/SN3 CYStek Product Specification Absolute Maximum Ratings(Ta=25℃, unless otherwise specified) • Maximum Temperatures Storage Temperature Tstg ................................................................................................... -65~+150 °C Junction Temperature Tj ............................................................................................................. +150 °C • Maximum Power Dissipation Total Power Dissipation Ptot (Note)........................................................................................... 350 mW • Maximum Voltages and Currents Repetitive Peak Reverse Voltage VRRM ............................................................................................ 300 V DC Blocking Voltage VR………………………………………………………………………….. 240V RMS Reverse Voltage VR(RMS)…………………………………………………………………….. 170V Continuous Forward Current IF (Note)…………………………………………………………… 225 mA Peak Repetitive Forward Current IFRM (Note) ………..………………………………………….625 mA. Surge Non-repetitive Forward Current IFSM @ tp=1µs ........................................................................ 4A @ tp=1s…….…………………………………………. 1A • Thermal Resistance, Junction to Ambient Air RθJA……………………………………….……357℃/W Note : Parts mounted on FR-4 board. For double diodes, Ptot is the total power dissipation of both diodes. Characteristics (Ta=25°C) Characteristic Symbol Condition Min. Max. Unit Reverse Breakdown Voltage VBR IR=100µA 300 - V VF(1) IF=20mA - 870 mV Forward Voltage (Note) VF(2) IF=100mA - 1000 mV IR(1) VR=240V,Tj=25℃ - 100 nA Reverse Leakage Current (Note) IR(2) VR=240V,Tj=150℃ 100 µA Diode Capacitance CD VR=0V, f=1MHz - 5 pF Reverse Recovery Time trr IF=IR=30mA RL=100 Ω measured at IR=3mA - 50 ns Notes : Pulse test, tp=380µs, duty cycle<2%. |
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