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IRFPC50LC датащи(PDF) 1 Page - Vishay Siliconix |
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IRFPC50LC датащи(HTML) 1 Page - Vishay Siliconix |
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1 / 11 page ![]() IRFPC50LC www.vishay.com Vishay Siliconix S22-0096-Rev. C, 31-Jan-2022 1 Document Number: 91242 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Isolated central mounting hole • Dynamic dV/dt rating • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of Power MOSFETs offer the designer a new standard in power transistors for switching applications. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 13 mH, Rg = 25 Ω, IAS = 11 A (see fig. 12) c. ISD ≤ 11 A, dI/dt ≤ 100 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case PRODUCT SUMMARY VDS (V) 600 RDS(on) ( Ω)VGS = 10 V 0.60 Qg (max.) (nC) 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single N-Channel MOSFET G D S TO-247 G D S Available ORDERING INFORMATION Package TO-247AC Lead (Pb)-free IRFPC50LCPbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS 600 V Gate-source voltage VGS ± 30 Continuous drain current VGS at 10 V TC = 25 °C ID 11 A TC = 100 °C 7.3 Pulsed drain current a IDM 44 Linear derating factor 1.5 W/°C Single pulse avalanche energy b EAS 920 mJ Repetitive avalanche current a IAR 11 A Repetitive avalanche energy a EAR 19 mJ Maximum power dissipation TC = 25 °C PD 190 W Peak diode recovery dV/dt c dV/dt 3.0 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) for 10 s 300 d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m |
Аналогичный номер детали - IRFPC50LC |
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Аналогичное описание - IRFPC50LC |
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