IRFD9014 datasheet(2/9 Pages) VISHAY

2 / 9 page

IRFD9014

www.vishay.com

Vishay Siliconix

S21-0887-Rev. D, 30-Aug-2021

Document Number: 91136

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

120

°C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = -250 μA

-60

VDS Temperature Coefficient

ΔVDS/TJ

Reference to 25 °C, ID = -1 mA

-0.060

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 μA

-2.0

-4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = -60 V, VGS = 0 V

-100

μA

VDS = -48 V, VGS = 0 V, TJ = 150 °C

-500

Drain-Source On-State Resistance

RDS(on)

VGS = -10 V

ID = -0.66 Ab

0.50

Forward Transconductance

gfs

VDS = -25 V, ID = -0.66 Ab

0.70

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = -25 V,

f = 1.0 MHz, see fig. 5

270

Output Capacitance

Coss

170

Reverse Transfer Capacitance

Crss

-31

Total Gate Charge

VGS = -10 V

ID = -6.7 A, VDS = -48 V,

see fig. 6 and 13b

Gate-Source Charge

Qgs

3.8

Gate-Drain Charge

Qgd

5.1

Turn-On Delay Time

td(on)

VDD = -30 V, ID = -6.7 A,

Rg = 24

Ω, RD = 4.0 Ω, see fig. 10b

-11

Rise Time

-63

Turn-Off Delay Time

td(off)

-10

Fall Time

-31

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.0

Internal Source Inductance

-6.0

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

-1.1

Pulsed Diode Forward Currenta

ISM

-8.8

Body Diode Voltage

VSD

TJ = 25 °C, IS = -1.1 A, VGS = 0 Vb

-5.5

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = -6.7 A, dI/dt = 100 A/μsb

160

Body Diode Reverse Recovery Charge

Qrr

0.096

0.19

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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