IRFBC40AS, SiHFBC40AS

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Vishay Siliconix

S21-0943-Rev. E, 20-Sep-2021

1

Document Number: 91113

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

FEATURES

requirement

• Improved gate, avalanche and dynamic dV/dt

ruggedness

• Fully characterized capacitance and avalanche

voltage and current

• Material categorization: for definitions of compliance

Note



RoHS-compliant and / or parts that are non RoHS-compliant. For



example, parts with lead (Pb) terminations are not RoHS-compliant.



Please see the information / tables in this datasheet for details

APPLICATIONS

• Switch mode power supply (SMPS)

• Uninterruptible power supply

• High speed power switching

TYPICAL SMPS TOPOLOGIES

• Single transistor forward

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

d. 1.6 mm from case

e. Uses IRFBC40A, SiHFBC40A data and test conditions

PRODUCT SUMMARY

600

1.2

42

10

20

Configuration

Single

N-Channel MOSFET

G

D

S

G D

S

Available

Available

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

SiHFBC40AS-GE3

Lead (Pb)-free

IRFBC40ASPbF

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

600

V

Gate-source voltage

± 30

6.2

A

3.9

25

Linear derating factor

1.0

W/°C

570

mJ

6.2

A

13

mJ

Maximum power dissipation

125

W

dV/dt

6.0

V/ns

Operating junction and storage temperature range

-55 to +150

°C

for 10 s

300