IRF840AS datasheet(2/10 Pages) VISHAY

2 / 10 page

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL

www.vishay.com

Vishay Siliconix

S21-0901-Rev. E, 30-Aug-2021

Document Number: 91066

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %

c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 %to 80 % VDS

d. Uses IRF840A, SiHF840A data and test conditions

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

(PCB mount)a

RthJA

°C/W

Maximum Junction-to-Case (Drain)

RthJC

1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0, ID = 250 μA

500

VDS Temperature Coefficient

ΔVDS/TJ

Reference to 25 °C, ID = 1 mA d

-0.58

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 30 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

μA

VDS = 400 V, VGS = 0 V, TJ = 125 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 4.8 A b

0.85

Forward Transconductance

gfs

VDS = 50 V, ID = 4.8 A

3.7

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

1018

Output Capacitance

Coss

155

Reverse Transfer Capacitance

Crss

-8.0

Output Capacitance

Coss

VGS = 0 V

VDS = 1.0 V, f = 1.0 MHz

1490

Output Capacitance

Coss

VDS = 400 V, f = 1.0 MHz

Effective Output Capacitance

Coss eff.

VDS = 0 V to 480 V c, d

Total Gate Charge

VGS = 10 V

ID = 8.0 A, VDS = 400 V,

see fig. 6 and 13 b, d

Gate-Source Charge

Qgs

9.0

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 250 V, ID = 8.0 A,

Rg = 9.1

Ω, RD = 31 Ω, see fig. 10 b, d

-11

Rise Time

-23

Turn-Off Delay Time

td(off)

-26

Fall Time

-19

Gate Input Resistance

f = 1 MHz, open drain

0.7

3.7

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

8.0

Pulsed Diode Forward Current a

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 8.0 A, VGS = 0 V b

2.0

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/μs b

422

633

Body Diode Reverse Recovery Charge

Qrr

-2.0

3.0

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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