IRF820AS, SiHF820AS, IRF820AL, SiHF820AL

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Vishay Siliconix

S21-0901-Rev. D, 30-Aug-2021

1

Document Number: 91058

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

FEATURES

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche

Voltage and Current

• Material categorization: for definitions of compliance

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

• Half Bridge and Full Bridge

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. Uses IRF820A, SiHF820A data and test conditions.

Note

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

PRODUCT SUMMARY

500

3.0

17

4.3

8.5

Configuration

Single

N-Channel MOSFET

G

D

S

G

D

S

G

D

S

Available

Available

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

SiHF820AS-GE3

SiHF820AL-GE3

Lead (Pb)-free

IRF820ASPbF

IRF820ALPbF

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

± 30

Continuous Drain Current

2.5

A

1.6

10

Linear Derating Factor

0.4

W/°C

140

mJ

2.5

A

5.0

mJ

Maximum Power Dissipation

50

W

dV/dt

3.4

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m