IRFP460B datasheet(2/10 Pages) VISHAY

2 / 10 page

IRFP460B, SiHG460B

www.vishay.com

Vishay Siliconix

S12-0812-Rev. B, 16-Apr-12

Document Number: 91502

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS.

b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-40

°C/W

Maximum Junction-to-Case (Drain)

RthJC

-0.45

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

500

VDS Temperature Coefficient

V

DS/TJ

Reference to 25 °C, ID = 250 μA

-0.56

V/°C

Gate-Source Threshold Voltage (N)

VGS(th)

VDS = VGS, ID = 250 μA

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

μA

VDS = 400 V, VGS = 0 V, TJ = 125 °C

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 10 A

0.2

0.25



Forward Transconductance

gfs

VDS = 50 V, ID = 10 A

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 100 V,

f = 1 MHz

3094

Output Capacitance

Coss

152

Reverse Transfer Capacitance

Crss

-13

Effective output capacitance, energy

relateda

Co(er)

VGS = 0 V,

VDS = 0 V to 400 V

131

Effective output capacitance, time

relatedb

Co(tr)

189

Total Gate Charge

VGS = 10 V

ID = 10 A, VDS = 400 V

170

Gate-Source Charge

Qgs

-14

Gate-Drain Charge

Qgd

-28

Turn-On Delay Time

td(on)

VDD = 400 V, ID = 10 A,

VGS = 10 V, Rg = 9.1 

-24

Rise Time

-31

Turn-Off Delay Time

td(off)

117

176

Fall Time

112

Gate Input Resistance

f = 1 MHz, open drain

1.8



Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

Pulsed Diode Forward Current

ISM

Diode Forward Voltage

VSD

TJ = 25 °C, IS = 10 A, VGS = 0 V

1.2

Reverse Recovery Time

trr

TJ = 25 °C, IF = IS = 10 A,

dI/dt = 100 A/μs, VR = 20 V

437

Reverse Recovery Charge

Qrr

-5.9

μC

Reverse Recovery Current

IRRM

-25

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