MA862 datasheet(1/3 Pages) PANASONIC

номер детали	MA862

подробное описание детали	Silicon epitaxial planar type

PDF	3 Pages

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производитель	PANASONIC [Panasonic Semiconductor]

домашняя страница	http://www.panasonic.com/industrial/

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1

Band Switching Diodes

Unit : mm

Internal Connection

Marking Symbol: M1I

MA4X862

Silicon epitaxial planar type

For band switching

I Features

• Two electrically isolated elements incorporated

• Small diode capacitance C

D

• Low forward dynamic resistance r

f

• Optimum for a band switching of a tuner

I Absolute Maximum Ratings T

a = 25°C

1 : Cathode 1

2 : Cathode 2

3 : Anode 2

4 : Anode 1

Mini Type Package (4-pin)

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

VR

35

V

Forward current

Single

IF

100

mA

(DC)

Double

75

mA/Unit

Operating ambient temperature

Topr

−25 to +85

°C

Storage temperature

Tstg

−55 to +100

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

IR

VR = 33 V

100

nA

Forward voltage (DC)

VF

IF = 100 mA

1.0

V

Diode capacitance

CD

VR = 6 V, f = 1 MHz

1.2

pF

Forward dynamic resistance

rf1*

1

IF = 2 mA, f = 100 MHz

0.65

Ω

rf2*

2

0.98

Ω

I Electrical Characteristics T

a = 25

°C

Note) 1

．Rated input/output frequency: 100 MHz

2

．*1 :rf measuring instrument: Nihon Koshuha Model TDC-121A

*2 :rf measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER

4

3

1

2

2.8

+ 0.2

− 0.3

1.5

+ 0.25

− 0.05

0.65

± 0.15

0.65

± 0.15

0.5 R

1

2

4

3

0.4

± 0.2

0.1 to 0.3

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