SIR862DP datasheet(6/13 Pages) VISHAY

6 / 13 page

SiR862DP

www.vishay.com

Vishay Siliconix

S10-0041-Rev. A, 11-Jan-10

Document Number: 65672

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Thermal Transient Impedance, Junction-to-Case



Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for silicon

technology and package reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?65672.

10-3

10-

1000

-1

10-4

100

0.1

Square Wave Pulse Duration (s)

0.1

0.01

0.02

Duty Cycle = 0.5

0.2

0.05

Single Pulse

Notes:

PDM

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 65 °C/W

3. TJM - TA =PDMZthJA(t)

4. Surface Mounted

10-3

10-2

10-1

10-4

Square Wave Pulse Duration (s)

0.1

0.01

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

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