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NJVMJD112G датащи(PDF) 3 Page - ON Semiconductor

номер детали NJVMJD112G
подробное описание детали  Complementary Darlington Power Transistors
PDF  11 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NJVMJD112G датащи(HTML) 3 Page - ON Semiconductor

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MJD112 (NPN), MJD117 (PNP)
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector−Emitter Voltage
VCEO
100
Vdc
Collector−Base Voltage
VCB
100
Vdc
Emitter−Base Voltage
VEB
5
Vdc
Collector Current
Continuous
Peak
IC
2
4
Adc
Base Current
IB
50
mAdc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
20
0.16
W
W/°C
Total Power Dissipation (Note1)
@ TA = 25°C
Derate above 25°C
PD
1.75
0.014
W
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
−65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
6.25
°C/W
Thermal Resistance, Junction−to−Ambient (Note 1)
RqJA
71.4
°C/W
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.



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