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BAT54CS3 датащи(PDF) 2 Page - Cystech Electonics Corp.

номер детали BAT54CS3
подробное описание детали  Small Signal Schottky (double) diodes
PDF  4 Pages
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производитель  CYSTEKEC [Cystech Electonics Corp.]
домашняя страница  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

BAT54CS3 датащи(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C302S3-H
Issued Date : 2004.04.13
Revised Date :
Page No. : 2/4
BAT54S3/BAT54AS3/BAT54CS3/BAT54SS3
CYStek Product Specification
Absolute Maximum Ratings
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VR
continuous reverse voltage
-
30
V
IF
continuous forward current
-
200
mA
IFRM
repetitive peak forward current
tp≤1s, δ≤0.5
-
300
mA
IFSM
non-repetitive peak forward current
tp<10ms
-
600
mA
Ptot
total power dissipation (per package)
Tamb≤25℃
-
200
mW
Tstg
storage temperature
-65
+150
℃
Tj
junction temperature
-
125
℃
Tamb
operating ambient temperature
-65
+125
℃
Characteristics (Ta=25°C, unless otherwise specified)
Parameter
Symbol
Condition
Min.
Max.
Unit
Reverse Breakdown Voltage
VBR
IR=100µA
30
-
V
VF(1)
IF=0.1mA
-
240
mV
VF(2)
IF=1mA
-
320
mV
VF(3)
IF=10mA
-
400
mV
VF(4)
IF=30mA
-
500
mV
Forward Voltage (Note 1)
VF(5)
IF=100mA
-
800
mV
Reverse Leakage Current (Note 2)
IR
VR=25V
-
2
µA
Diode Capacitance
CD
VR=1V, f=1MHz
-
10
pF
Reverse Recovery Time
trr
when switched from IF= 10mA
to IR=10mA; RL=100
Ω;
measured at IR=1mA
-
5
ns
Notes
: 1.pulse test, tp=380µs, duty cycle<2%.
2.pulse test, tp=300µs, duty cycle<2%.
Thermal Characteristics
Symbol
Parameter
Conditions
Value
Unit
Rth j-a
thermal resistance from junction to ambient
note 1
625
K/W
Note 1 : Refer to SOT-323 standard mounting conditions.



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