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ISCP400P датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали ISCP400P
подробное описание детали  isc Silicon PNP Power Transistor
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
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ISCP400P датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
ISCP400P
DESCRIPTION
·
Good Linearity of hFE
·
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -300V(Min)
·
Wide Area of Safe Operation
·
Complement to Type ISCN400P
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Adudio frequency power amplifier
·
High frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-300
V
VCEO
Collector-Emitter Voltage
-300
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1
A
PC
Collector Power Dissipation
@ TC=25℃
25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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