TP5322

Rev. 3

September 14, 2004

2

Thermal Characteristics

Package

Power Dissipation @

°C/W

°C/W

TO-243AA

-0.26A

-0.90A

1.6W

15

78**

-0.26A

-0.9A

TO-236AB

-0.12A

-0.70A

0.36W

200

350

-0.12A

-0.7A

**Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substate.

Symbol

Parameter

Min

Typ

Max

Units

Conditions

Drain-to-Source

Breakdown Voltage

-220

V

Gate Threshold Voltage

-1.0

-2.4

V

4.5

mV/°C

Gate Body Leakage

-100

nA

-10

µA

Zero Gate Voltage Drain Current

-1.0

mA

On-State Drain Current

-0.7

-0.95

A

10

15

Static Drain-to-Source

ON-State Resistance

8.0

12

Ω

1.7

%/°C

Forward Transconductance

100

250

mmho

Input Capacitance

110

Common Source Output Capacitance

45

Reverse Transfer Capacitance

20

pF

f = 1MHz

Turn-ON Delay Time

10

Rise Time

15

Turn-Off Delay Time

20

Fall Time

15

ns

Diode Forward Voltage Drop

-1.8

V

Reverse Recovery Time

300

ns

Notes:

1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.)

2) All AC parameters sample tested.

Switching Waveforms and Test Circuit

Input

Pulse

Generator

D.U.T

OUTPUT

0V

-10V

0V

V

DD

Input

Output

Doc.# DSFP-TP5322

A042005