FEPB16XT datasheet(3/5 Pages) VISHAY

3 / 5 page

FEP16xT, FEPB16xT

www.vishay.com

Vishay General Semiconductor

End of Life - FEPF16 Series - October 2021

Revision: 06-May-2021

Document Number: 88596

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Per Diode

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

100

150

Case Temperature (°C)

Resistive or Inductive Load

100

150

200

250

300

Number of Cycles at 60 Hz

C = 100 °C

8.3 ms Single Half Sine-Wave

0.2

0.6

0.4

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1

100

Instantaneous Forward Voltage (V)

J = 125 °C

J = 25 °C

Pulse Width = 300 μs

1 % Duty Cycle

50 V to 200 V

300 V to 400 V

500 V to 600 V

100

0.1

0.01

100

Percent of Rated Peak Reverse Voltage (%)

50 V to 400 V

500 V to 600 V

J = 125 °C

J = 25 °C

J = 100 °C

0.1

100

1000

Reverse Voltage (V)

J = 25 °C

f = 1.0 MHz

sig = 50 mVp-p

50 V to 400 V

500 V to 600 V

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