SS8P2CL, SS8P3CL

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Vishay General Semiconductor

Revision: 13-May-2022

1

Document Number: 89030

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High Current Density Surface-Mount

Schottky Barrier Rectifier

LINKS TO ADDITIONAL RESOURCES

FEATURES

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

• Material categorization: for definitions of compliance

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters, freewheeling

diodes,

DC/DC

converters,

and

polarity

protection

application.

MECHANICAL DATA

Case:

SMPC (TO-277A)

Molding compound meets UL 94 V-0 flammability rating

Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade

Base P/NHM3_X - halogen-free, RoHS-compliant and

AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B,.....)

Terminals:

matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

PRIMARY CHARACTERISTICS

2 x 4.0 A

20 V, 30 V

120 A

20 mJ

0.41 V

150 °C

Package

SMPC (TO-277A)

Circuit configuration

Common cathode

SMPC (TO-277A)

K

2

1

Anode 1

Anode 2

Cathode

K

eSMP

333

DDD3 D

3D Models

Available

PARAMETER

SYMBOL

SS8P2CL

SS8P3CL

UNIT

Device marking code

S82CL

S83CL

Maximum repetitive peak reverse voltage

20

30

V

Maximum average forward rectified current (fig. 1)

total device

8.0

A

per diode

4.0

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

120

A

20

mJ

Operating junction and storage temperature range

-55 to +150

°C