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SS10P2CL датащи(PDF) 1 Page - Vishay Siliconix |
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SS10P2CL датащи(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page ![]() SS10P2CL, SS10P3CL www.vishay.com Vishay General Semiconductor Revision: 30-Jul-2021 1 Document Number: 89036 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface-Mount Dual Common Cathode Schottky Rectifiers LINKS TO ADDITIONAL RESOURCES FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. MECHANICAL DATA Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test PRIMARY CHARACTERISTICS IF(AV) 2 x 5.0 A VRRM 20 V, 30 V IFSM 200 A EAS 20 mJ VF at IF = 5 A 0.338 V TJ max. 150 °C Package SMPC (TO-277A) Circuit configuration Common cathode K 2 1 SMPC (TO-277A) eSMP® Series Anode 1 Anode 2 Cathode K 333 DDD3 D 3D Models Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS10P2CL SS10P3CL UNIT Device marking code S102CL S103CL Maximum repetitive peak reverse voltage VRRM 20 30 V Maximum average forward rectified current (fig. 1) total device IF(AV) 10 A per diode 5.0 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 200 A Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode EAS 20 mJ Operating junction and storage temperature range TJ, TSTG -55 to +150 °C |
Аналогичный номер детали - SS10P2CL |
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Аналогичное описание - SS10P2CL |
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