ALD310708A/ALD310708

Advanced Linear Devices, Inc.

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These devices are built to offer minimum offset voltage and differential

thermal response, and they can also be used for switching and

amplifying applications in -0.80V to -8.0V (+/-0.40V to +/-4.0V)

powered systems where low input bias current, low input capacitance,

and fast switching speed are desired. These devices, exhibiting well

controlled turn-off and sub-threshold characteristics, operate the

same as standard enhancement mode P-Channel MOSFETs.

However, the precision of the Gate Threshold Voltage enable two

key additional characteristics, or operating features. First, the

operating current level varies exponentially with gate bias voltage at

GENERAL DESCRIPTION (cont.)

or below the Gate Threshold Voltage (subthreshold region). Second,

the circuit can be biased and operated in the subthreshold region

with nA of bias current and nW of power dissipation.

For most general applications, connect the V+ pin to the most

positive voltage and the V- and IC (internally-connected) pins to the

most negative voltage in the system. All other pins must have

voltages within these voltage limits at all times. Standard ESD

protection facilities and procedures for static sensitive devices are

required when handling these devices.

ABSOLUTE MAXIMUM RATINGS

-8.0V

-8.0V

Operating Current

80mA

Power dissipation

500mW

Operating temperature range SCL, PCL

0°C to +70°C

Storage temperature range

-65°C to +150°C

Lead temperature, 10 seconds

+260°C

CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.

Notes:

2

Sample tested parameters

OPERATING ELECTRICAL CHARACTERISTICS

ALD310708A

ALD310708

Gate Threshold

VGS(th)

-0.82

-0.80

-0.78

-0.82

-0.80

-0.78

V

IDS = -1µA, VDS = -0.1V

Voltage

Offset Voltage

VOS

1

5

2

20

mV

VGS(th)M1 - VGS(th)M2 or

VGS(th)M3 - VGS(th)M4

Gate Threshold

TCVGS(th)

-2

-2

mV/°C

Temperature

Drain Source On

IDS(ON)

-1.65

-1.65

mA

VGS = VDS = -5.0V

Current

Transconductance

GFS

570

570

µA/V

VGS = VDS = -5.0V

Transconductance

∆GFS

11

%

VGS = VDS = -5.0V

Mismatch

GOS

48

48

µA/V

VGS(th) = -4.0V,

VDS = -5.0V

Drain Source On

RDS(ON)

1.25

1.25

KΩ

VGS = -5.0V,

Resistance

VDS = -0.1V

Drain Source On

∆RDS(ON)

11

%

Resistance Mismatch

Drain Source

BVDSX

-8.0

-8.0

V

Breakdown

Drain Source

IDS (OFF)

400

400

pA

Gate Leakage Current

IGSS

200

200

pA

CISS

2.5

2.5

pF

Parameter

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Test Conditions