4AM13

3

Electrical Characteristics (Ta = 25°C) (1 Unit)

N channel

P channel

Item

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Test conditions

Drain to source

breakdown voltage

V(BR)DS

S

60

—

—

–60

—

—

V

ID = 10 mA, VGS = 0

Gate to source

breakdown voltage

V(BR)GS

S

±20

—

—

±20

—

—

V

IG = ±100 µA, VDS =

0

Gate to source leak

current

IGSS

—

—

±10

—

—

±10

µA

VGS = ±16 V, VDS =

0

Zero gate voltage drain

current

IDSS

—

—

250

—

—

–250

µA

VDS = 50 V, VGS = 0

Gate to source cutoff

voltage

VGS(off) 1.0

—

2.0

–1.0

—

–2.0

V

ID = 1 mA, VDS = 10

V

Static drain to source on

state resistance

RDS(on) —

0.25

0.35

—

0.28

0.4

Ω

ID = 1.5 A,

VGS = 10 V*

1

—

0.35

0.5

—

0.4

0.55

Ω

ID = 1.5 A, VGS = 4

V*1

Forward transfer

admittance

|yfs|

1.5

2.5

—

1.5

2.5

—

S

ID = 1.5 A,

VDS = 10 V*

1

Input capacitance

Ciss

—

240

—

—

400

—

pF

VDS = 10 V, VGS = 0,

Output capacitance

Coss

—

115

—

—

240

—

pF

f = 1 MHz

Reverse transfer

capacitance

Crss

—

35

—

—

70

—

pF

Turn-on delay time

td(on)

—

4

—

—

5

—

ns

ID = 1.5 A, VGS = 10

V,

Rise time

tr

—

20

—

—

25

—

ns

RL = 20 Ω

Turn-off delay time

td(off)

—

80

—

—

180

—

ns

Fall time

tf

—

40

—

—

80

—

ns

Body to drain diode

forward voltage

VDF

—

1.2

—

—

–1.1

—

V

IF = 3 A, VGS = 0

Body to drain diode

reverse recovery time

trr

—

75

—

—

140

—

ns

IF = 3 A, VGS = 0,

dIF/dt = 50 A/µs

Note:

1. Pulse Test

Polarity of test conditions for P channel device is reversed.