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TLE7259G датащи(PDF) 13 Page - Infineon Technologies AG |
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TLE7259G датащи(HTML) 13 Page - Infineon Technologies AG |
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13 / 23 page ![]() TLE 7259 G Preliminary Data Sheet 13 Rev. 1.3, 2004-12-13 Bus Receiver Receiver threshold voltage, recessive to dominant edge V BUS,rd 0.42 × V S 0.48 × V S –V – Receiver dominant state V BUS,dom – – 0.42 × V S V (LIN Spec 1.3 (2.0); Line 10.1.9 (3.1.9)) Receiver threshold voltage, dominant to recessive edge V BUS,dr –0.52 × V S 0.58 × V S V V BUS,rec < VBUS < 27 V Receiver recessive state V BUS,rec 0.58 × V S – – V (LIN Spec 1.3 (2.0); Line 10.1.10 (3.1.10) Receiver center voltage V BUS,c 0.475 × V S 0.5 × V S 0.525 × V S V (LIN Spec 1.3 (2.0); Line 10.1.11 (3.1.11) Receiver hysteresis V BUS,hys 0.02 × V S 0.04 × V S 0.1 × V S V V BUS,hys = V BUS,rec - VBUS,dom (LIN Spec 1.3 (2.0); Line 10.1.12 (3.1.12)) Wake-up threshold voltage V BUS,wk 0.40 × V S 0.5 × V S 0.6 × V S V– Dominant time for bus wake-up t WK,bus 30 – 150 µs– Table 4 Electrical Characteristics (cont’d) 7.0 V < V S < 27 V; RL = 500 Ω; VEN > VEN,ON; -40 °C < Tj < 125 °C; all voltages with respect to ground; positive current flowing into pin; unless otherwise specified. Parameter Symbol Limit Values Unit Remarks Min. Typ. Max. |
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