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HFM2012C датащи(PDF) 2 Page - Rectron Semiconductor |
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HFM2012C датащи(HTML) 2 Page - Rectron Semiconductor |
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2 / 7 page ![]() LEAD TEMPERATURE, ( OC) 25 1.6 2.0 0 1.2 0.8 0.4 0 75 50 175 100 125 150 FIG.2 TYPICAL FORWARD CURRENT DERATING CURVE FIG.1 TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) 0 0.1 10 1.0 1000 100 60 20 40 80 100 120 140 FIG.3 MAXIMUM REVERSE CHARACTERISTICS trr +0.5A 50 Ω NONINDUCTIVE 10 Ω NONINDUCTIVE 0 -0.25A -1.0A 1cm SET TIME BASE FOR 30/1 ns/cm NOTES: 1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. D.U.T 25 Vdc (approx) ( - ) ( - ) ( + ) ( + ) 1 NON- INDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) Single Phase Half Wave 60Hz Resistive or Inductive Load TA = 25 OC TA = 150 OC INSTANTANEOUS FORWARD VOLTAGE, (V) 1.0 0.3 0.1 0.03 0.01 3.0 10 20 2.5 2.0 1.5 1.0 0.5 0 3.0 3.5 Pulse Width=300uS 1% Duty Cycle TJ = 25 OC NUMBER OF CYCLES AT 60Hz 1 20 10 30 50 60 40 2 4 6 8 10 20 40 80 100 8.3mS Single Half Sine-Wave JEDEC Method FIG.4 MAXIMUM INSTANTANEOUS FORWARD CHARACTERISTICS FIG.5 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT RATING AND CHARACTERISTICS CURVES (HFM2012C) |
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