BUL1102EFP datasheet(2/6 Pages) STMICROELECTRONICS

номер детали	BUL1102EFP

подробное описание детали	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

PDF	6 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-Case

Max

4.17

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 1100 V

100

µA

IEBO

Emitter Cut-off Current

(IB = 0)

VEB = 12 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

450

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 2 A

IB = 400 mA

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 2 A

IB = 400 mA

1.5

hFE

∗

DC Current Gain

IC = 250 mA

VCE = 5 V

IC = 2 A

VCE = 5 V

RESISTIVE LOAD

Storage Time

Fall Time

IC = 2.5 A

VCC = 250 V

IB1 = 0.5 A

IB2 = 1 A

TP = 30

µs

(see figure 2)

2.5

300

µs

Ear

Rpetitive Avalanche

Energy

L = 2 mH

C = 1.8 nF

IBR

≤ 2.5A

oC < TC <125oC

(see figure 1)

6mJ

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Areas

Derating Curve

BUL1102EFP

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