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TF3400B датащи(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

номер детали TF3400B
подробное описание детали  N-Channel 30-V(D-S) MOSFET
PDF  5 Pages
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производитель  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
домашняя страница  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

TF3400B датащи(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  TF3400B Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co TF3400B Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co TF3400B Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co TF3400B Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co TF3400B Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co  
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background image
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
IGSS
100
nA
VGS(th)
0.
6
ID(ON)
30
A
m
Ω
m
Ω
gFS
10
15
S
VSD
0.71
1
.2
V
IS
2.5
A
Ciss
Coss
Crss
Rg
1.2
3.6
Ω
Qg
9.7
12
nC
Qgs
1.6
nC
Qgd
3.1
nC
tD(on)
3.3
5
ns
tr
4.8
7
ns
tD(off)
26.3
40
ns
tf
4.1
6
ns
trr
16
20
ns
Qrr
8.9
12
nC
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
IF=5A, dI/dt=100A/µs
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=15V, ID=5.0A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=2.7Ω,
RGEN=3Ω
m
Ω
VGS=4.5V, ID=4.0A
IS=1A,VGS=0V
VDS=5V, ID=5.0A
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
µA
Gate Threshold Voltage
VDS=VGS ID=250µA
VDS=25V, VGS=0V
VDS=0V, VGS=±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=2.5V, ID=3.0A
VGS=4.5V, VDS=5V
VGS=10V, ID=5.0A
Reverse Transfer Capacitance
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 4 : June 2005
28
35
33
38
48
38
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
www.sztuofeng.com
2
1.0
V
SOT-23
Plastic-Encapsulate MOSFETS
0.8
TF3400B
Oct.2021 V1.1
605
pF
62
pF
48
pF



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