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TF207N датащи(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

номер детали TF207N
подробное описание детали  N-Channel 20-V(D-S)
PDF  5 Pages
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производитель  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
домашняя страница  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

TF207N датащи(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  TF207N Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co TF207N Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co TF207N Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co TF207N Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co TF207N Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co  
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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
2
MOSFET ELECTRICAL CHARACTERISTICS
SOT-23-3L Plastic-Encapsulate MOSFETS
TF207N
Sep 2019 V1.0
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC CHARACTERICTISCS
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
20
V
Zero gate voltage drain current
IDSS
VDS =18V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±12V, VDS = 0V
±100
nA
Gate threshold voltage (note 3)
VGS(th)
VDS =VGS, ID =250µA
0.
5
V
Drain-source on-resistance (note 3)
RDS(on)
VGS =4.5V, ID =6A
mΩ
VGS =2.5V, ID =5A
18
mΩ
Forward tranconductance (note 3)
gFS
VDS =5V, ID =6A
10
S
Diode forward voltage (note 3)
VSD
IS=2.00A, VGS = 0V
1.0
V
DYNAMIC CHARACTERICTISCS (note4)
Input Capacitance
Ciss
VDS =10V,VGS =0V,f =1MHz
615
pF
Output Capacitance
Coss
150
pF
Reverse Transfer Capacitance
Crss
120
pF
SWITCHING CHARACTERICTISCS (note 4)
Turn-on delay time
td(on)
7.2
ns
Turn-on rise time
tr
13
ns
Turn-off delay time
td(off)
29
ns
Turn-off fall time
tf
11
ns
Total Gate Charge
Qg
VDS =10V,VGS =4.5V,ID=6A
12
nC
Gate-Source Charge
Qgs
1.2
nC
Gate-Drain Charge
Qgd
3.0
nC
Notes :
1.Repetitive rating：Pluse width limited by maximum junction temperature
2.Surface Mounted on FR4 board，t≤10 sec.
3. Pulse test : Pulse width≤300μs, duty cycle≤2%.
4. Guaranteed by design, not subject to production.
1.0
15
13
14
VGS=5V, VDS=10V, RL=1.4Ω,
RGEN=3Ω
100
nA
9
12



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