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8205 датащи(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

номер детали 8205
подробное описание детали  Dual N-Channel MOSFET
PDF  6 Pages
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производитель  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
домашняя страница  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

8205 датащи(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

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MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23-6 Plastic-Encapsulate MOSFETS
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC CHARACTERICTISCS
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
20
V
Zero gate voltage drain current
IDSS
VDS =16V,VGS = 0V
1
µA
Gate-body leakage current
IGSS
VGS =±12V, V DS = 0V
±100
nA
Gate threshold voltage (note 3)
VGS(th)
VDS =VGS, ID =250µA
0.
5
V
Drain-source on-resistance (note 3)
RDS(on)
VGS =4.5V, ID =5A
25
mΩ
VGS =2.5V, ID =4A
33
mΩ
Forward tranconductance (note 3)
gFS
VDS =5V, ID =5A
10
S
Diode forward voltage (note 3)
VSD
IS=3.50A, VGS = 0V
1.2
V
DYNAMIC CHARACTERICTISCS (note4)
Input Capacitance
Ciss
VDS =8V,VGS =0V,f =1MHz
800
pF
Output Capacitance
Coss
155
pF
Reverse Transfer Capacitance
Crss
125
pF
SWITCHING CHARACTERICTISCS (note 4)
Turn-on delay time
td(on)
VDD=10V,VGS=4V,
ID=1A,RGEN=10Ω
18
ns
Turn-on rise time
tr
4.8
ns
Turn-off delay time
td(off)
43.5
ns
Turn-off fall time
tf
20
ns
Total Gate Charge
Qg
VDS =10V,VGS =4.5V,ID=4A
11
nC
Gate-Source Charge
Qgs
2.2
nC
Gate-Drain Charge
Qgd
2.5
nC
Notes :
1.Repetitive rating：Pluse width limited by maximum junction temperature
2.Surface Mounted on FR4 board，t≤10 sec.
3. Pulse test : Pulse width≤300μs, duty cycle≤2%.
4. Guaranteed by design, not subject to production.
1.0
26
23
Oct 2020 V1.1
0.65
8205



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