TF3423 datasheet(2/6 Pages) TUOFENG

номер детали	TF3423

подробное описание детали	P-Channel 20-V(D-S) MOSFET

PDF	6 Pages

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производитель	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

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Feb,2018 V1.0

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate MOSFETS

MOSFET ELECTRICAL CHARACTERISTICS

Ta =25 ℃ unless otherwise specified

Parameter

Symbol

Test Condition

Min

Typ

Max Units

Static

Drain-source breakdown voltage

V(BR)DSS VGS = 0V, ID =-250µA

-20

Gate-source threshold voltage

VGS(th)

VDS =VGS, ID =-250µA

-0.5

-0.7

-1

Gate-source leakage

IGSS

VDS =0V, VGS =±10V

±100

Zero gate voltage drain current

IDSS

VDS =-20V, VGS =0V

-1

µA

Drain-source on-state resistance a

RDS(on)

VGS =-4.5V, ID =-2.0A

0.090

0.100

Ω

VGS =-2.5V, ID =-1.0A

0.110

0.130

Forward transconductance a

gfs

VDS =-5V, ID =-2.0A

4.0

6.5

Dynamicb

Input capacitance

Ciss

285

VDS =-10V,VGS =0V,f =1MHz

Output capacitance

Coss

Reverse transfer capacitance

Crss

Total gate charge

VDS =-10V,VGS =-4.5V,ID =-2A

5.5

2.9

VDS =-10V,VGS =-2.5V,ID =-2A

Gate-source charge

Qgs

045

Gate-drain charge

Qgd

0.75

Gate resistance

f =1MHz

6.0

Ω

Turn-on delay time

td(on)

VDD=-10V,

9.8

Rise time

4.9

RL=5Ω, ID =-1A,

Turn-off delay time

td(off)

20.5

VGEN=-4.5V,Rg=3Ω

Fall time

7.0

Drain-source body diode characteristics

Continuous source-drain diode current

TC=25

℃

-1.3

Pulse diode forward current a

ISM

-10

Body diode voltage

VSD

IS=-1.0A

-0.8

-1.2

Notes :

a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%.

b.Guaranteed b y

desi g

n ,

not sub j

ect to

roduction testin g

TF3423

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