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TF3422 датащи(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

номер детали TF3422
подробное описание детали  N-Channel 30-V(D-S) MOSFETc
PDF  5 Pages
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производитель  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
домашняя страница  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

TF3422 датащи(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  TF3422 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co TF3422 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co TF3422 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co TF3422 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co TF3422 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co  
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Symbol
Min
Typ
Max
Units
BVDSS
55
V
1
IGSS
±100
nA
VGS(th)
0.6
1.3
2
V
ID(ON)
10
A
125
160
157
200
m
Ω
gFS
11
S
VSD
0.78
1
V
IS
1A
Ciss
214
300
pF
Coss
31
pF
Crss
12.6
pF
Rg
1.3
3
Ω
Qg
2.6
3.3
nC
Qgs
0.6
nC
Qgd
0.8
nC
tD(on)
2.3
ns
tr
2.4
ns
tD(off)
16.5
ns
tf
2ns
trr
20
30
ns
Qrr
17
nC
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=27.5V, ID=2.1A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=27.5V, RL=12Ω,
RGEN=3Ω
Reverse Transfer Capacitance
Turn-On Rise Time
Turn-Off DelayTime
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Forward Transconductance
VDS=5V, ID=2.1A
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
VGS=0V, VDS=25V, f=1MHz
Output Capacitance
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=2.1A
m
Ω
VGS=2.5V, ID=1.5A
Gate Threshold Voltage
VDS=VGS ID=250μA
On state drain current
VGS=4.5V, VDS=5V
VDS=44V, VGS=0V
μA
Gate-Source leakage current
VDS=0V, VGS=±12V
IF=2.1A, dI/dt=100A/μs
IF=2.1A, dI/dt=100A/μs
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
Rev0: Oct 2005
TF3422
www.sztuofeng.com
Feb,2018 V1.0
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
2



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