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TF3416 датащи(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

номер детали TF3416
подробное описание детали  N-Channel 20-V(D-S) MOSFET
PDF  5 Pages
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производитель  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
домашняя страница  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

TF3416 датащи(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  TF3416 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co TF3416 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co TF3416 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co TF3416 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co TF3416 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co  
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background image
Symbol
Min
Typ
Max
Units
BVDSS
20
V
100
±1
µA
±10
µA
VGS(th)
0.4
0.6
1
V
ID(ON)
30
A
18
22
21
26
m
Ω
26
34
m
Ω
gFS
29
S
VSD
0.76
1
V
IS
2.5
A
Ciss
1160
pF
Coss
187
pF
Crss
146
pF
Rg
1.5
Ω
Qg
16
nC
Qgs
0.8
nC
Qgd
3.8
nC
tD(on)
6.2
ns
tr
12.7
ns
tD(off)
51.7
ns
tf
16
ns
trr
17.7
ns
Qrr
6.7
nC
VDS=0V, VGS=±10V
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=0V, VDS=10V, f=1MHz
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
VGS=5V, VDS=10V, RL=1.5Ω,
RGEN=3Ω
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=10V, ID=6.5A
Gate Source Charge
m
Ω
VGS=2.5V, ID=5.5A
IS=1A,VGS=0V
VDS=5V, ID=6.0A
VGS=1.8V, ID=5A
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
A
Gate Threshold Voltage
VDS=VGS ID=250µA
VDS=16V, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±4.5V
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=6.5A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=4.5V, VDS=5V
VGS=4.5V, ID
5
Reverse Transfer Capacitance
IF=6.5A, dI/dt=100A/µs
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
TF3416
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
www.sztuofeng.com
Feb,2018 V1.0
2
=6.5A
n



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