TF2369 datasheet(2/7 Pages) TUOFENG

2 / 7 page

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 30

VDS Temperature Coefficient

V

DS/TJ

ID = - 250 µA

- 19

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS , ID = - 250 µA

- 1.2

- 2.5

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = - 30 V, VGS = 0 V

- 1

µA

VDS = - 30 V, VGS = 0 V, TJ = 55 °C

- 5

On-State Drain Currenta

ID(on)

VDS - 5 V, VGS = - 10 V

- 25

Drain-Source On-State Resistancea

RDS(on)

VGS - 10 V, ID = - 5.4 A

0.024

0.029



VGS - 6 V, ID = - 5 A

0.028

0.034

VGS - 4.5 V, ID = - 4.6 A

0.033

0.040

Forward Transconductancea

gfs

VDS = - 15 V, ID = - 5.4 A

Dynamicb

Input Capacitance

Ciss

VDS = - 15 V, VGS = 0 V, f = 1 MHz

1295

Output Capacitance

Coss

150

Reverse Transfer Capacitance

Crss

130

Total Gate Charge

VDS = - 15 V, VGS = - 10 V, ID = - 5.4 A

VDS = - 15 V, VGS = - 4.5 V, ID = - 5.4 A

11.4

Gate-Source Charge

Qgs

3.4

Gate-Drain Charge

Qgd

3.8

Gate Resistance

f = 1 MHz

1.5

7.7

15.4



Turn-On Delay Time

td(on)

VDD = - 15 V, RL = 3.5 

ID  - 4.3 A, VGEN = - 10 V, Rg = 1 

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

612

Turn-On Delay Time

td(on)

VDD = - 15 V, RL = 3.5 

ID  - 4.3 A, VGEN = - 4.5 V, Rg = 1 

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

TC = 25 °C

- 2.1

Pulse Diode Forward Current (t = 100 µs)

ISM

- 80

Body Diode Voltage

VSD

IS = - 4.3 A, VGS 0 V

- 0.8

- 1.2

Body Diode Reverse Recovery Time

trr

IF = - 4.3 A, dI/dt = 100 A/µs, TJ = 25 °C

Body Diode Reverse Recovery Charge

Qrr

714

Reverse Recovery Fall Time

Reverse Recovery Rise Time

TF2369

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23-3LPlastic-Encapsulate MOSFETS

www.sztuofeng.com

,2018 V1.0

Mar

TF2369 датащи(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

TF2369 датащи(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

Html Pages

1 2 3 4 5 6 7

датащи скачать

ссылки URL