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TF2306 датащи(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

номер детали TF2306
подробное описание детали  N-Channel 30-V(D-S) MOSFET
PDF  5 Pages
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производитель  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
домашняя страница  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

TF2306 датащи(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  TF2306 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co TF2306 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co TF2306 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co TF2306 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co TF2306 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co  
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background image
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
IGSS
100
nA
VGS(th)
1
1.9
3
V
ID(ON)
15
A
50
88
m
Ω
gFS
VSD
0.79
1
V
IS
2.5
A
Ciss
230
Coss
pF
Crss
Rg
36
Ω
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Turn-Off Fall Time
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VDS=5V, ID=3.6A
VGS=10V, VDS=5V
VGS=10V, ID=3.6A
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
IDSS
µA
Gate Threshold Voltage
VDS=VGS ID=250µA
VDS=24V, VGS=0V
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
Ω
VGS=4.5V, ID=2.8A
IS=1A
Turn-On Rise Time
Gate resistance
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=0V, VDS=0V, f=1MHz
Reverse Transfer Capacitance
Turn-Off DelayTime
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Gate Drain Charge
DYNAMIC PARAMETERS
VGS=10V, VDS=15V, ID=3.6A
VGS=4.5V, VDS=10V, ID=3.6A,
RGEN=3Ω
Gate Source Charge
Turn-On DelayTime
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t
≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Rev 5 : July 2005
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
TF2306
www.sztuofeng.com
Feb,2018 V1.0
2
57
94
pF
40
17
pF
11
S
4.0
nC
0.75
nC
0.65
nC
10
nS
50
10
20
nS
nS
nS



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