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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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QPD1025LEVB2 датащи(PDF) 13 Page - Qorvo, Inc |
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QPD1025LEVB2 датащи(HTML) 13 Page - Qorvo, Inc |
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13 / 26 page  Error! Unknown document property name. Data Sheet Rev. L, March 2022 Subject to change without notice | All rights reserved 13 of 26 www.qorvo.com QPD1025L 1800 W, 65 V, 0.96 – 1.215GHz, GaN RF Input-Matched Transistor Notes: 1. Test Conditions: VD = 50 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See page 16 for load pull reference planes where the performance was measured. 4. Measured Load-Pull Smith Charts at 50 V 1, 2, 3 1.1GHz, Load-pull 58.4 58 57.6 57 56.4 55.8 18.1 17.6 17.1 16.6 16.1 76.8 75.8 74.8 72.8 • Max Power is 58.6dBm at Z = 1.67-0.78i = -0.2499-0.2088i • Max Gain is 18.6dB at Z = 1.25+1.46i = -0.2627+0.4338i • Max DEff is 77.7% at Z = 1.8+0.74i = -0.221+0.1882i Zo = 3 3dB Compression Referenced to Peak Gain Zs(1fo) = 1.18-2.13i Zs(2fo) = 1.44-3.22i Zs(3fo) = 6.46-1.31i Zl(2fo) = 0.54 Zl(3fo) = 3.24-0.3i Power Gain DEFF |
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