ACE18205S datasheet(1/2 Pages) ACE

номер детали	ACE18205S

подробное описание детали	Dual N-Channel Enhancement Mode Field Effect Transistor

PDF	2 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE18205S

Dual N-Channel Enhancement Mode Field Effect Transistor

VER 1.1

1

Description

The ACE18205S uses advanced trench technology to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in

other Switching application. It is ESD protected.

ACE18205S is electrically identical.

RoHS Compliant.

Features

• V

DS (V) = 20V, ID = 4 A

RDS(ON)< 37mΩ (VGS = 2.5V)

RDS(ON)< 27mΩ (VGS = 4.5V)

• High power and current handing capability

• Lead free product is acquired

• Surface mount package

Applications

• Battery protection

• Load switch

• Power management

Absolute Maximum Ratings (T

A=25℃ unless otherwise noted)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board,

t ≤ 10 sec.

Parameter

Symbol

Value

Unit

Drain-Source Voltage

V

DS

20

V

Gate-Source Voltage

V

GS

±10

V

Drain Current-Continuous

I

D

4

A

Drain Current-Pulsed (Note 1)

I

DM

25

A

Maximum Power Dissipation

P

D

1. 25

W

Operating Junction and Storage Temperature Range

T

J,TSTG

-55 To 150

℃

Thermal Resistance, Junction-to-Ambient (Note 2)

RθJA

100

℃/W

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