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ACE16604B датащи(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE16604B датащи(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 2 page ![]() ACE16604B N-Channel Enhancement Mode Power MOSFET VER 1.1 1 General Description ⚫ Power Supply ⚫ LED Backlighting Features ⚫ VDS=60V ⚫ ID=51A ⚫ RDS(ON)@VGS=10V, TYP 6.7 mΩ ⚫ RDS(ON)@VGS=4.5V, TYP 12 mΩ Absolute Maximum Ratings Parameter Symbol Ratings Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) *AC TC=25℃ ID 51 A TC=100℃ 32 Drain Current (Pulsed) *B IDM 204 A Power Dissipation TC=25℃ PD 41.7 W Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Note: A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. Repetitive rating, pulse width limited by junction temperature. C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating Thermal Resistance Ratings Parameter Symbol Maximum Units Maximum Junction-to-Case (Drain) Steady State RthJC 3 °C/W |
Аналогичный номер детали - ACE16604B |
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Аналогичное описание - ACE16604B |
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