ACE13818B datasheet(1/2 Pages) ACE

номер детали	ACE13818B

подробное описание детали	Dual N-Channel Enhancement Mode Power MOSFET

PDF	2 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE13818B

Dual N-Channel Enhancement Mode Power MOSFET

VER 1.1

1

Description

⚫

Motor Control

⚫

Portable Equipment

Features

⚫

VDS (V) = 30V

⚫

ID = 8A

⚫

RDS(ON)@VGS = 10V, TYP 7mΩ

⚫

RDS(ON)@VGS = 4.5V, TYP 10mΩ

Absolute Maximum Ratings@TA=25℃ unless otherwise noted

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Continuous)*AC

TA=25℃

ID

8

A

TA=100℃

7.2

Drain Current (Pulsed)*B

IDM

25

A

Power Dissipation

TA=25℃

PD

21

W

Operating temperature / Storage temperature

TJ/TSTG

-55~150

℃

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA=25°C. The value in any given application depends on the user's specific board design.

B: Pulse width limited by max, junction temperature.

C: The current rating is bas

ed on the t≤ 10s junction to ambient thermal resistance rating

Ordering information

ACE13818B XX + H

PD：PDFN3*3-8L

Pb - free

Halogen - free

Аналогичный номер детали - ACE13818B

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ACE Technology Co., LTD...	ACE13810B	183Kb / 2P	Dual Asymmetric N-Channel Enhancement Mode Power MOSFET VER 1.3

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