ACE13810B datasheet(1/2 Pages) ACE

номер детали	ACE13810B

подробное описание детали	Dual Asymmetric N-Channel Enhancement Mode Power MOSFET

PDF	2 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE13810B

Dual Asymmetric N-Channel Enhancement Mode Power MOSFET

VER 1.3

1

Description

⚫

CPU core power

⚫

Computer / server peripherals

⚫

POL

⚫

Synchronous buck converter

⚫

Telecom DC/DC

Features

⚫

VDS (V) =30V, ID = 29A

⚫

RDS(ON) @VGS = 10V, TYP 9.5mΩ

⚫

RDS(ON) @VGS = 4.5V, TYP 12.5mΩ

Absolute Maximum Ratings @TA=25℃ unless otherwise noted

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Continuous)*AC

TA=25℃

ID

29

A

TA=100℃

18.3

Drain Current (Pulsed)*B

IDM

100

A

Power Dissipation

TA=25℃

PD

16.7

W

Operating temperature / storage temperature

TJ/TSTG

-55~150

℃

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating, Package Limited 18A.

Thermal Resistance Ratings

Parameter

Symbol

Maximum

Unit

Maximum Junction-to-Ambient

Steady State

RthJC

7.5

°C/W

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