ACE8204TL datasheet(1/7 Pages) ACE

номер детали	ACE8204TL

подробное описание детали	Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

PDF	7 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE8204TL

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

VER 1.2

1

Description

The ACE8204TL uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

They offer operation over a wide gate drive range from 2.5V to 8V. It is ESD protected. This device is

suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain

configuration.

Features

• V

DS(V)=20V

• I

D=7A

• R

DS(ON)<17 m

Ω (V

GS=4.5V)

• R

DS(ON)<24

mΩ (V

GS=2.5V)

• ESD Protected: 2000V

• DFN3*3-8L

Absolute Maximum Ratings

TA=25℃, unless otherwise noted.

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±8

V

Drain Current (Continuous) *AC

TA=25℃

ID

7

A

TA=70℃

6

Drain Current (Pulse)*B

IDM

40

A

Power Dissipation

TA=25℃

PD

2.5

W

TA=70℃

1.6

Operating Temperature / Storage Temperature

TJ/TSTG

-55/150

OC

Packaging Type

DFN3*3-8L

Аналогичный номер детали - ACE8204TL

производитель	номер детали	датащи	подробное описание детали
ACE Technology Co., LTD...	ACE8202B	651Kb / 7P	Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection VER 1.2
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Аналогичный номер детали - ACE8204TL

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