| поискавой системы для электроныых деталей |
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ACE11701B датащи(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE11701B датащи(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 2 page ![]() ACE11701B P-Channel Enhancement Mode Power MOSFET VER 1.1 1 Description ⚫ Power Management Features ⚫ VDS=-20V ⚫ ID=-3.8A ⚫ RDS(ON)@VGS=-4.5V, TYP 41mΩ ⚫ RDS(ON)@VGS=-2.5V, TYP 55mΩ Absolute Maximum Ratings Parameter Symbol Ratings Units Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Drain Current(Continuous) *AC TA=25℃ ID -3.8 A TA=70℃ -3.1 Drain Current(Pulsed) *B IDM -15.2 A Power Dissipation TA=25℃ PD 1.25 W Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Note : A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. Repetitive rating, pulse width limited by junction temperature. C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating Thermal Resistance Ratings Parameter Symbol Limit Unit Maximum Junction-to-Ambient t ≤10s RthJA 100 ℃/W Ordering information ACE11701B XX + H BMS:TSOT-23-3 Pb - free Halogen - free |
Аналогичный номер детали - ACE11701B |
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Аналогичное описание - ACE11701B |
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